Sergio Pizzini is author of more than 250 technical papers published in international Journals with peer review.
 

He authored or co-authored twelve books.

 

Sixties

Seventies

Eighties

Nineties

1990 - S.Pizzini, F. Borsani, M. Acciarri Effect of oxygen and carbon segregation on the electrical properties of grain boundaries in silicon Material Science and Engin. B4 (1990) 353

1990 - S.Pizzini, M. Acciarri Effect of grain boundary segregation on the transbarrier conductivity of polycrystalline silicon MRS Proceed., Vol 182 (1990) 185

1990 - L.Meda, G.F.Cerofolini, C.Bresolin, R.Dierckx, D.Donelli, M.Orlandini, M.Anderle, R.Canteri, G.Ottaviani, R.Tonini, C.Claeys, J.Vanhellemont, S.Pizzini and S.Farina State and evolution of hydrogen implanted silicon in "Semiconductor Silicon '90" H.R.Huff, K.G.Barreclought and Jun-ichi Chikawa, Eds, The Electrochemical Society, Pennington NJ, pp.456-471

1991 - S.Pizzini, N.Buttà, M.Acciarri Surfaces and internal surface effects in "Polycrystalline Semiconductors II" J.H.Werner, H.P.Strunk edt pp. 178-189 Springer Verlag

1991 - S. Pizzini, M. Acciarri, S. Acerboni, S. Binetti, L. Tarchini About the effect of the interaction of carbon and oxygen on the electrical activity of extended defects in crystalline silicon in "Defects in silicon II" W. Murray Bullis, U. Gosele, F. Shimura Ed. The Electrochemical Society Vol 91-9 (1991) 155

1991 - S. Pizzini, M. Acciarri, S. Binetti Spectroscopical and electrical evidences about segregation effects in semiconductors Solid State Phenomena 19-20 (1991) 479

1991 - S. Pizzini, M. Acciarri, S. Binetti, S. Acerboni About the effect of impurity contaminations, processing and thermal annealing on the PV properties of polycrystalline silicon Proceed.10th European Photovoltaic Solar Energy Conference 8-12 April 1991 Lisbon. Portugal, p.670

1992 - S.Binetti, M. Acciarri, S. Acerboni, S. Pizzini Interactions among point defects, oxygen and carbon in polycrystalline silicon Vuoto XXII, (1992) 93

1992 - S.Binetti, M.Acciarri, S.Acerboni, S.Ferrari, P.Granatieri, C.Savigni, S.Pizzini Spectroscopical and Electrical Characterization of polycrystalline silicon materials for high efficiency solar cells Proc. 11th Photovoltaic solar Energy Conf. Montreux(1992) 443-446

1993 - S. Pizzini, S. Binetti, M Acciarri, S. Acerboni Interaction of oxygen, carbon and extended defects in silicon Phys. Stat. Sol. (a) 138 (1993) 451

1993 - S.Binetti, S.Ferrari, M.Acciarri, S.Acerboni, R.Canteri, S.Pizzini New evidences about carbon and oxygen segregation processes in polycrystalline silicon Solid State Phenomena, 32-33 (1993) 181

1994 - S. Pizzini, M. Acciarri, S. Binetti, S. Acerboni Determination of the electronic structure of grain boundaries by energy resolved photoconductivity measurements Materials Sci. Eng. B24 (1994) 159

1994 - M. Acciarri, C. Savigni, S. Binetti, S. Pizzini Effect of local inhomogeneities on the electrical properties of polycrystalline silicon Solid State Phenomena, 37-38 (1994) 219

1994 - S.Pizzini, M. Acciarri, S. Binetti, S. Acerboni, C. Savigni Interaction of point and extended defects in silicon: their influence on the polycrystalline silicon substrate quality for high efficiency solar cells Semiconductor Silicon 1994. The Electrochemical Society, (1994) 756

1994 - S.Binetti, S.Ratti, M.Acciarri, S.Pizzini Study of different polycrystalline silicon materials: effect of hydrogen and deuterium passivation Proceeding of 12th European Photovoltaic Solar Energy Conference H. S. Stephens & Associated Publ. Amsterdam (1994) 709

1995 - S.Binetti, M.Acciarri, A. Brianza, C.Savigni, S.Pizzini Effect of oxygen concentration on the diffusion length in CZ and MCZ silicon Material Sci. Techn. 11 (1995) 665

1995 - M. Acciarri, S. Binetti, S. Ratti, C. Savigni, S. Pizzini, F. Ferrazza, D. Margadonna Study and conditioning of defected areas in Eurosil multycrystalline silicon Proc. of the 13th European Photovoltaic Solar Energy Conference  1995 Nizza (Francia) 1336

1996 - C.Savigni, M.Acciarri, S.Binetti, S.Pizzini About a novel gettering procedure for multicrystalline silicon samples Solid State Phenomena 51-52 (1996) 485

1996 - S.Binetti, M.Acciarri, C.Savigni, A.Brianza, S.Pizzini, A.Musinu Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality Materials Sci. Eng. B36 (1996) 68

1996 - S. Binetti, M. Acciarri, I. Gelmi, S. Pizzini About the electrical and structural properties of erbium thermally diffused in single crystal silicon MRS. Proc. Vol. 422 (1996) 87

1996 - M. Acciarri, S. Binetti, M. Garavaglia, S. Pizzini Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration Material Science Eng. B42 (1996) 208

1997 - S. Binetti, S. Basu, C. Savigni, M. Acciarri, S. Pizzini Passivation of extended defects in silicon by catalytically dissociated molecular hydrogen Journal de Physique III 7 (1997) 1487

1997 - S. Pizzini, M. Acciarri, S. Binetti, D. Narducci, C. Savigni Recent achievements in semiconductor defect passivation Material Science Eng. B45 (1997) 126

1997 - M.Acciarri, V.Longoni, S.Pizzini, F.Ferrazza Determination of the compensation ratio and its effect on the electrical properties in multicrystalline silicon for solar cells production Proc. of the 14th European Photovoltaic Solar Energy Conference 1997 Barcellona (Spagna) 754

1998 - M. Acciarri, S. Spadoni, G. Barbi, S. Pizzini Determination of the surface recombination velocity and of its evolution in monocrystalline silicon by the Light Beam Induced Current technique in planar configuration Solid State phenomena 63-64 (1998) 123

1998 - A.Cavallini, B.Fraboni, S.Pizzini Deep levels in Er-doped liquid phase epitaxy grown silicon Appl. Phys. Lett. 72 (1998) 488

1999 - A.Cavallini, B.Fraboni, S.Pizzini, S.Binetti, S.Sanguinetti, L.Lazzarini, G.Salviati Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy J.Appl. Phys. 85 (1999) 1582

1999 - A.Castaldini, D.Cavalcoli, A.Cavallini, S.Pizzini, E.Susi Electrical characterization of as-grown and thermally treated 8” silicon wafers Solid State Phenomena 69-70 (1999) 143

New Century

Books