Sergio Pizzini is author of more than 250 technical papers published in international Journals with peer review.
He authored or co-authored twelve books.
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![]() Gas phase electrocatalytic oxidation of benzene using a solid state electrochemical reactor Gazz. Chim. Ital. 110 (1980) 389 |
![]() Solar grade silicon as potential candidate material for low cost terrestrial solar cells Solar Energy Materials 6 (1982) 253 |
![]() Influence of iron, titanium and zirconium on photovoltaic behaviour of polycrystalline solar cells Proc. MRS 83-11 (1983) 200-220 |
![]() 0n the effect of impurities on the photovoltaic behaviour of solar grade silicon. I. The role of boron and phosphorous primary impurities in p-type single crystal silicon J. Electrochem. Soc. 131 (1984) 2128 |
![]() Effect of impurities in polycrystalline silicon for photovoltaic applications in Materials Processing: Theory and Practices II F. F. Wang Ed., North Holland Publish. (1984) p. 167 |
![]() Effects of structural defects on electrical and photovoltaic properties of directionally solidified polycrystalline silicon in "Poly-microcrystalline and amorphous semiconductors” Les Editions de Physique(1984) p. 181 |
![]() On the effect of impurities on the photovoltaic behaviour of solar grade silicon. II. The influence of titanium, vanadium, chromium, iron andzirconium on PV behaviour of polycrystalline solar cells J. Electrochem. Soc. 133 (1986) 2363 |
![]() Electrical conductivity of HTaWO6.H20 and HTaWO6 Solid state ionics 19 (1986) 1013 |
![]() 0ptical and ESR properties of phosphate glasses containing ruthenium and titanium ions J. Chem. Soc., Farad. Trans. 83 (1987) 705 |
![]() Semiconductor gas sensors based on ZnO thick films in "High tech Ceramics" P. Vincenzini Ed., Elsevier Science PubI. (1987) p. 2155 |
![]() Recombination effects and impurity segregation at grain boundaries inpolycrystalline silicon Rev. Phys. Appl. 22 (1987) 631 |
![]() Al-related recombination centres in polycrystalline silicon J. Appl. Phys.62 (1987) 2556 |
![]() Grain boundary segregation of oxygen and carbon in polycrystalline silicon Appl. Phys. Lett. 51 (1987) 676 |
![]() Spectromagnetic evidence for spatial correlation of copper centres inphosphate glasses and its effects on the charge transport processes J.Chem. Soc., Farad. Trans. 183 (1987) 3587 |
![]() Influence of extended defects and native impurities on the electrical properties of directionally solidified polycrystalline silicon J. Electrochem. Soc. 135 (1988) 155 |
![]() Electrical activity of extended defects in polycrystalline silicon Rev. Phys. Appl. 23 (1988) 101 |
![]() Temperature-dependent activation energy for polaronic conduction in copper doped zinc phosphate glasses Phys. Scripta 38 (1988) 92 |
![]() Growth of BGO single crystals using a directional solidification technique J .Crystal Growth, 94 (1989) 373 |
![]() FT-IR microcharacterization of grain boundaries in polycrystalline silicon Solid state Comm. 69 (1989) 475 |
![]() Thick film ZnO resistive gas sensors J. Electrochem. Soc. 136 (1989) 1945 |
![]() Influence of the structure and morphology on the sensitivity to nitrogen oxides of Phtalocyanine thin film resistive gas sensors Sensors and Actuators 17 (1989) 481 |
![]() On the influence of the Cottrell atmosphere on the recombination losses at grain boundaries in polycrystalline silicon in" Polycrystalline Semiconductors" J.H.Wemer, H.J.Moeller, H.P.Strunk Ed., Springer Verlag (1989) p.115 |
![]() Effect of impurity segregation on the electrical properties of grain boundaries of polycrystalline silicon in "Point, extended and surface defects in semiconductors" G. Benedek, A. Cavallini, W. Schroeter |
![]() Role of extended defects on the physical properties of electronic ceramics Materials Chem. Phys. 23 (1989) 349 |
![]() Structural characterization of bismuth germanate single crystals Nucl.Instr. Meth. in Phys. Res. A 279 (1989) 402 |
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