Sergio Pizzini is author of more than 250 technical papers published in international Journals with peer review.
 

He authored or co-authored four books.

 

Sixties

Seventies

Eighties

1980 - S. Pizzini Gas phase electrocatalytic oxidation of benzene using a solid state electrochemical reactor Gazz. Chim. Ital. 110 (1980) 389

1982 - S. Pizzini Solar grade silicon as potential candidate material for low cost terrestrial solar cells Solar Energy Materials 6 (1982) 253

1983 - S.Pizzini, C.Calligarich, C.Chemelli, M.Gasparini, P.Rava, L.Sardi Influence of iron, titanium and zirconium on photovoltaic behaviour of polycrystalline solar cells Proc. MRS 83-11 (1983) 200-220

1984 - S. Pizzini, C. Calligarich 0n the effect of impurities on the photovoltaic behaviour of solar grade silicon. I. The role of boron and phosphorous primary impurities in p-type single crystal silicon J. Electrochem. Soc. 131 (1984) 2128

1984 - S. Pizzini Effect of impurities in polycrystalline silicon for photovoltaic applications in Materials Processing: Theory and Practices II F. F. Wang Ed., North Holland Publish. (1984) p. 167

1984 - M. Beghi, C. Chemelli, S. Fossati, S. Pizzini Effects of structural defects on electrical and photovoltaic properties of directionally solidified polycrystalline silicon in "Poly-microcrystalline and amorphous semiconductors” Les Editions de Physique(1984) p. 181

1986 - S.Pizzini, L.Bigoni, M.Beghi, C.Chemelli, S.Fossati, M.Tincani On the effect of impurities on the photovoltaic behaviour of solar grade silicon. II. The influence of titanium, vanadium, chromium, iron andzirconium on PV behaviour of polycrystalline solar cells J. Electrochem. Soc. 133 (1986) 2363

1986 - C. Mari, F. Bonino, M. Catti, R. Pasinetti, S. Pizzini Electrical conductivity of HTaWO6.H20 and HTaWO6 Solid state ionics 19 (1986) 1013

1987 - S. Pizzini, D. Narducci, C. Mari, F. Morazzoni, A. Gervasini 0ptical and ESR properties of phosphate glasses containing ruthenium and titanium ions J. Chem. Soc., Farad. Trans. 83 (1987) 705

1987 - S. Pizzini, A. Giambitto, R. Riva, L. Gurnari, C. Mari Semiconductor gas sensors based on ZnO thick films in "High tech Ceramics" P. Vincenzini Ed., Elsevier Science PubI. (1987) p. 2155

1987 - S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, P.L. Fabbri Recombination effects and impurity segregation at grain boundaries inpolycrystalline silicon Rev. Phys. Appl. 22 (1987) 631

1987 - M.Rodot, J.E.Burree, A.Mesli, G.Revel, R.Kishore, S.Pizzini Al-related recombination centres in polycrystalline silicon J. Appl. Phys.62 (1987) 2556

1987 - S. Pizzini, P. Cagnoni, A. Sandrinelli, M. Anderle, R. Canteri Grain boundary segregation of oxygen and carbon in polycrystalline silicon Appl. Phys. Lett. 51 (1987) 676

1987 - D. Narducci, C. Mari, S. Pizzini, F. Morazzoni Spectromagnetic evidence for spatial correlation of copper centres inphosphate glasses and its effects on the charge transport processes J.Chem. Soc., Farad. Trans. 183 (1987) 3587

1988 - S. Pizzini, A. Sandrinelli, M. Beghi, D. Narducci, F. Allegretti, S.Torchio, G. Fabbri, G. P. Ottaviani, F. Demartin, A. Fusi Influence of extended defects and native impurities on the electrical properties of directionally solidified polycrystalline silicon J. Electrochem. Soc. 135 (1988) 155

1988 - S. Pizzini, D. Narducci, M. Rodot Electrical activity of extended defects in polycrystalline silicon Rev. Phys. Appl. 23 (1988) 101

1988 - D. Narducci, P. Casati, G.B. Preve, S. Pizzini Temperature-dependent activation energy for polaronic conduction in copper doped zinc phosphate glasses Phys. Scripta 38 (1988) 92

1989 - F. Allegretti, B. Borgia, R. Riva, F. De Notaristefani, S. Pizzini Growth of BGO single crystals using a directional solidification technique J .Crystal Growth, 94 (1989) 373

1989 - A. Borghesi, M. Geddo, G. Guizzetti, S. Pizzini, D. Narducci, A.Sandrinelli FT-IR microcharacterization of grain boundaries in polycrystalline silicon Solid state Comm. 69 (1989) 475

1989 - S. Pizzini, N. Butta, D. Narducci, M. Palladino Thick film ZnO resistive gas sensors J. Electrochem. Soc. 136 (1989) 1945

1989 - S. Pizzini, G. Timò, M. Beghi, C. Mari, J. Faltenmaier Influence of the structure and morphology on the sensitivity to nitrogen oxides of Phtalocyanine thin film resistive gas sensors Sensors and Actuators 17 (1989) 481

1989 - S. Pizzini, F. Borsani, A. Sandrinelli, D. Narducci, M.Anderle, R.Canteri On the influence of the Cottrell atmosphere on the recombination losses at grain boundaries in polycrystalline silicon in" Polycrystalline Semiconductors" J.H.Wemer, H.J.Moeller, H.P.Strunk Ed., Springer Verlag (1989) p.115

1989 - S. Pizzini, F. Borsani, A. Sandrinelli, D. Narducci Effect of impurity segregation on the electrical properties of grain boundaries of polycrystalline silicon in "Point, extended and surface defects in semiconductors" G. Benedek, A. Cavallini, W. Schroeter

1989 - S. Pizzini Role of extended defects on the physical properties of electronic ceramics Materials Chem. Phys. 23 (1989) 349

1989 - S. Pizzini, F. Allegretti Structural characterization of bismuth germanate single crystals Nucl.Instr. Meth. in Phys. Res. A 279 (1989) 402

Nineties

New Century

Books