Sergio Pizzini is author of more than 250 technical papers published in international Journals with peer review.
He authored or co-authored twelve books.
![]() ![]() |
![]() ![]() |
![]() ![]() |
![]() ![]() |
![]() ![]() |
![]() Surface micro-characterisation of silicon wafers by LBIC technique in planar configuration and by Attenuate Total Reflection Spectroscopy Phil. Magazine B, 80 (2000) 579 |
![]() Advances in silicon surface characterisation using light beam injection techniques Materials Science Eng. B37 (2000) 235-239 |
![]() Study of radiative and non radiative recombination process at dislocations in silicon by photoluminescence and LBIC measurements MRS Symp. Proc. Vol. 588 (2000) 117-122 |
![]() About the D1 and D2 dislocation luminescence and its correlation with oxygen segregation phys. stat.sol. (b) 222(2000) 141 |
![]() On the role of extended defects in the transport properties of Er-doped silicon Phil. Magazine B, 80(2000) 571 |
![]() The photoluminescence emission in the 0.7-0.9 range from oxygen precipitates, thermal donors and dislocations in silicon J. Phys:Condens.Matter , 12(2000) 10131 |
![]() Beam Injection studies of dislocations and oxygen agglomeration in semiconductor silicon Solid state phenomena 78-79 (2001) 57 |
![]() Fast Laser Scanning For In-Line Solar Cells Characterization in Photovoltaic Industry Proceedings of the 17th European Photovoltaic Solar Energy Conference 2001, Munich (Germany) |
![]() Fast Lbic in-Line Characterization For Process Quality Control in The Photovoltaic Industry Solar Energy Mat. and Solar Cells 72 (2002) 417 |
![]() A. Castaldini, A. Cavallini Optical Properties of oxygen agglomerates in silicon Solid State Phenomena, 82-84(2002) 75 |
![]() Chemistry and Physics of defect interaction in semiconductors Solid State Phenomena, 85-86(2002) 1-66 |
![]() Defect interaction and clustering in semiconductors Transtech Publ (Zürich) 2002 |
![]() Radiative recombination processes of thermal donors in silicon MRS Symp. Proc. Vol.692 (2002) 275 |
![]() Thin-film Si-based optoelectronics in "Growth, Characterization and Electronic Applications of Si-based thin films" Ed. R.B.Bergmann, Research Signpost Publ. India, (2002) p.101-128 |
![]() Optical properties of oxygen precipitates and dislocations in silicon J. Appl. Phys. 92 (2002) 2437 |
![]() A.Castaldini, A.Cavallini Study of the correlation between radiative and non-radiative channels in silicon J. Phys. Condens. Matter 14 (2002) 13223 |
![]() Dislocation luminescence in nitrogen doped Czochralski and float zone silicon J. Phys. Condens. Matter 14 (2002) 13247 |
![]() Correlation between defect structure and luminescence spectra in monocrystalline erbium-implanted silicon J. Phys. Condens. Matter 14 (2002) 13241 |
![]() Effect of surface state density on room temperature photoluminescence from Si-SiO2 structures in the range of band-to band recombination in silicon Semiconductors 36 (2002) 1225 |
![]() Effect of pressure-enhanced single step annealing on the silicon luminescence Mat. Res. Soc. Symp. Proc. Vol. 744 (2003) 351 |
![]() Analysis of extended defects in 6H-SiC using photoluminescence and Light beam induced current spectroscopy Materials Science Forum, 433-436 (2003) 317 |
![]() Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples Microelectronic Eng. 66 (2003) 297 |
![]() Surface contaminant detection in semiconductors using noncontacting techniques J. Electrochem. Soc. 150 (2003) G456 |
![]() Efficient silicon light emitting diode with temperature-stable spectral characteristics Semiconductors 37 (2003) 756 |
![]() Effect of high pressure isostatic annealing on oxygen segregation in Czochralski silicon J. Appl. Phys. 94(2003) 7476 |
![]() Characterization of nanocrystalline silicon film grown by LEPECVD for photovoltaic applications Mat. Res.Soc. Symp. Proc. 76 (2003) A5.3.1 |
![]() Electrical and optical characterization of electron irradiated X ray detectors based on 4H-SiC epitaxial layers Materials Science Forum, 457-469 (2004) 1503 |
![]() Electrical characterization of electron irradiated X ray detectors based on 4H-SiC epitaxial layers Diamond and related materials 13 (2004) 414 |
![]() Dislocation luminescence in plastically deformed silicon crystals: effect of dislocation intersection and oxygen decoration Eur.Phys.J.Appl.Phys. 27 (2004) 123 |
![]() Structural and optical characterization of a dispersion of nanocavities in a crystalline silicon matrix Eur.Phys.J.Appl.Phys. 27 (2004) 89 |
![]() Luminescence of dislocations and oxide precipitates in Si Solid state Phenomena, Vol.95-96 (2004) 273 |
![]() The origin of photoluminescence from oxygen precipitates nucleated at low temperature in semiconductor silicon J. Electrochem. Soc. 151(2004) G866 |
![]() Photoluminescence of dislocations in nitrogen-doped Czochralski Silicon Chin. Phys. Lett. 21 2242-2244 (2004) |
![]() Defect states in Czochralski p-type silicon: the role of oxygen and dislocations phys.stat.sol.(a) 202(2005) 889-895 |
![]() Electronic defect states in Cz p-ty pe silicon Appl. Phys Lett. 86 (2005) 162109 |
![]() Electrical and optical Characterization of electron-irradiated 4H-SiC epitaxial layers annealed at low temperature Diamond and related materials 14(2005) 1150-1153 |
![]() Rod-like defects in CZ-Si investigated by spin resonance and photoluminescence spectroscopies phys.stat. sol (c) 2 (2005) 1807-1811 |
![]() Nanocrystalline silicon grown by LEPECVD for photovoltaic applications Solar En. Mat. & Solar Cells 87(2005) 11-24 |
![]() Experimental evidence of dislocation related shallow states in p-type Si Phys.Rev.Lett. 95 (2005) 076401-1 |
![]() Nanocrystalline silicon film grown by LEPECVS for optoelectronic applications Thin solid Films 487(2005) 19-25 |
![]() From electronic grade to solar grade silicon: chances and challenges in photovoltaics phys.stat.sol.(a) 1-15(2005) DOI 10.1002 |
![]() Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon J.Appl. Phys. 98(2005) 043507 |
![]() Spectroscopical and electrical characterization of n-type multicrystalline silicon Proceedings 20th EUPV solar energy Conference, (2005) 1198 |
![]() Photovoltaic quantum efficiency enhancement by light harvesting of organo-lantanide complexes J.Luminesc. 118 (2006) 325 |
![]() Optical properties of shuffle dislocations Appl. Phys. Lett. 88 (2006) 211910 |
![]() Defect studies on silicon and silicon-germanium for PV and optoelectronic applications Mater.Sci.in Semicond. Proc. 9(2006) 66 |
![]() Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications Materials Sci. Eng. B134(2006) 118 |
![]() Diffusion Length and junction spectroscopy analysis of low temperature annealing of electron irradiation-induced deep levels in 4H-SiC Journal of Applied Physics, 99 (2006) 033701 |
![]() Micro-and nano structures in silicon studied by DLTS and scanning probe methods Semiconductors, 41 (2007) 421 |
![]() Effect of Pt particle size and distribution on photoelectrochemical hydrogen evolution by p-Si photocathodes Langmuir C (2007) 74 |
![]() Defect analysis of hydrogenated nanocrystalline silicon films PhysicaB 401-402(2007) 519 |
![]() Structural Characterization of nc-silicon films grown by low-energy PECVD on different substrates Applied Surface Science 254(2008) 2804-2808 |
![]() Strucural homogeneity of nc-Si Film grown by low energy PECVD Electrochemical and solid state Letters, 11(6) (2008) P5-P7 |
![]() Bulk solar silicon: how chemistry and physics play to get a benevolent microstructured material Appl. Phys. A 96 (2008) 171-188 |
![]() Advances in structural characterization of thin film nanocrystalline silicon for photovoltaic applications Solid State Phenomena,Vols. 131-133 (2008) 33-38 |
![]() Advanced Silicon Materials Research for electronic and photovoltaic applications Materials Sci. Eng.B, Volumes B158-160 (2009) |
![]() Tuning by means of laser annealing of electronic and structural properties of nc.Si/a-Si:H Mater. Sci. Engin. B 159-160 (2009) 31-33 |
![]() Crystallinity and microstructure in Si films grown by plasma-enhanced CVD: a simple atomic scale model validated by experiments Appl. Phys. Letters 94 (2009) 051904 |
![]() Towards solar silicon: challenges and benefits for low cost photovoltaics Solar Energy Materials and Solar cells 94 (2010) 1528-1533 |
![]() Progress in recycling of silicon fine powders from fixed abrasive operation on silicon ingots Proc. 26th EUPVSEC (2011)1981-1985 |
![]() Reversible and Irreversible Voltage Manipulation of Interfacial Magnetic Anisotropy in Pt/Co/Oxide Multilayers Phys.Rev Appl. 14,064041 |
![]() ![]() |